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VN0808L

MOSFET 80V 0.3A 0.8W

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SeekIC No. : 00166633 Detail

VN0808L: MOSFET 80V 0.3A 0.8W

VN0808L Data Sheet

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Part Number:
VN0808L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.3 A
Resistance Drain-Source RDS (on) : 4000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-226AA-3    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 80 V
Continuous Drain Current : 0.3 A
Resistance Drain-Source RDS (on) : 4000 mOhms
Package / Case : TO-226AA-3


Features:

• Low On-Resistance: 3.6


Specifications

Parameter Symbol VN0808L VN0808LS VQ1006P Unit
Single Total Quad
Drain-Source Voltage VDS 80 80  90   V
Gate-Source Voltage VGS ±30 ±30 ±20   
Continuous Drain Current(TJ = 150) TA= 25 ID 0.3 0.33

0.4 

   A
TA= 100 0.19 0.21  0.23  
Pulsed Drain Currenta IDM 1.9 1.9  2  
Power Dissipation TA= 25 PD 0.8 0.9  1.3 2  W
TA= 100 0.32 0.4 0.52   0.8
Thermal Resistance, Junction-to-Ambient RthJA 156 139 96   62.5 /W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150
Notes
a. Pulse width limited by maximum junction temperature.


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