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VN2406D

MOSFET 240V 1.12A

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SeekIC No. : 00165807 Detail

VN2406D: MOSFET 240V 1.12A

VN2406D Data Sheet

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Part Number:
VN2406D
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 240 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.12 A
Resistance Drain-Source RDS (on) : 6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 240 V
Resistance Drain-Source RDS (on) : 6 Ohms
Continuous Drain Current : 1.12 A


Features:

` Low On-Resistance: 3.5
` Secondary Breakdown Free: 260 V
` Low Power/Voltage Driven
` Low Input and Output Leakage


Application

· High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
· Telephone Mute Switches, Ringer Circuits
· Power Supply, Converters
· Motor Control


Specifications

Parameter
Symbol
TN2410L
VN2406Db
VN2410LS
Unit
Drain-Source Voltage
VDS
240
240
240
V
Gate-Source Voltage
VGS
±20
±20
±20
A
Continuous Drain Current ID

(TJ = 150)
TA= 25
ID
0.18
0.12
0.19
TA= 100
0.11
0.7
0.12
Pulsed Drain Currenta
IDM
1
3
2
W
Power Dissipation
TA= 25
PD
0.8
20
0.9
TA= 100
0.32
8
0.4
Thermal Resistance, Junction-to-Ambient
R thJA
156
6.25c
139
/W
Operating Junction and Storage Temperature Range
−55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
c. Maximum junction-to-case


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