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VN50300T

MOSFET 500V 0.33A

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SeekIC No. : 00164615 Detail

VN50300T: MOSFET 500V 0.33A

VN50300T Data Sheet

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Part Number:
VN50300T
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.022 A
Resistance Drain-Source RDS (on) : 300000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-236-3    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-236-3
Resistance Drain-Source RDS (on) : 300000 mOhms
Continuous Drain Current : 0.022 A


Features:

• Moderate On-Resistance: 240
• Secondary Breakdown Free: 520 V
• Low Power/Voltage Driven
• Low Input and Output Leakage
• Excellent Thermal Stability


Application

• High-Voltage Drivers: Relays, Solenoids,Lamps, Hammers, Displays, Transistors,etc.
• Telephone Mute Switches, Ringer Circuits
• Power Supply, Converters
• Motor Control


Specifications

Parameter Symbol 2N6661 VN88AFD Unit
Drain-Source Voltage VDS 500 500 V
Gate-Source Voltage VGS ±30 ±30
Continuous Drain Current(TJ = 150) TA= 25 ID 0.033 0.022 A
TA= 100 0.021 0.013
Pulsed Drain Currenta IDM 0.013 0.08
Power Dissipation TA= 25 PD 0.8 0.35 W
TA= 100 0.32 0.14
Thermal Resistance, Junction-to-Ambient RthJA 156 350 /W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150
Notes
a. Pulse width limited by maximum junction temperature.


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