VQ7254J

The VQ7254J is designed as one kind of N- and P-channel enhancement-mode MOS transistor arrays.

Some absolute maximum ratings of VQ7254J have been concluded into several points as follow. (1)Its drain to source voltage would be 20V for N-channel and would be -20V for P-channel. (2)Its gate to source voltage would be +/-30V. (3)Its continuous drain current would be 2A for N-channel and would be -2A for P-channel. (4)Its pulsed drain current would be +/-3A. Pulse width limited by maximum junction temperature. (5)Its power dissipation would be 1.75W for N-channel and 1.75W for P-channel at Ta=25°C and would be 1.05W for N-channel and would be 1.05W for P-channel at Ta=80°C. (6)Its operating temperature range would be from -40°C to 100°C. (7)Its storage temperature range would be from -40°C to 150°C. (8)Its lead temperature 1/16'' from case for 10 seconds would be 300°C. (9)Its thermal coupling factor single (K)-Q1-Q4 or Q2-Q3 would be 60%. (10)Its thermal coupling factor single (K)-Q1-Q2-Q3-Q4, Q1-Q3 or Q2-Q4 would be 50%. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VQ7254J are concluded as follow. (1)Its thermal resistance junction to ambient single would be 96.2°C/W. (2)Its thermal resistance junction to ambient quad would be 82.5°C/W. (3)Its drain to source on voltage would be min 2V and typ 2.5V and max 3V. (4)Its drain to source on-resistance would be min 2 and typ 2.5 and max 3. (5)For N-channel its drain source breakdown voltage would be min 20V and typ -40V. (6)Its gate threshold voltage would be min 0.8V and typ 1.5V. (7)Its gate body leakage would be typ +/-1nA and max +/-100nA. (8)Its zero gate voltage drain current would be min 0.1uA and max 600uA. (9)Its on-state drain current would be typ 1.8A. And so on. If you have any question or suggestion or want to know more information of VQ7254J please contact us for details. Thank you!