VSC7809

Features: • Integrated Photodetector/Transimpedance Amplifier Optimized for High-Speed Optical Communications Applications• Fibre Channel/Gigabit Ethernet Compatible• High Bandwidth• Low Input Noise Equivalent Power• Large Optically Active Area• Single 3.3V Powe...

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SeekIC No. : 004543394 Detail

VSC7809: Features: • Integrated Photodetector/Transimpedance Amplifier Optimized for High-Speed Optical Communications Applications• Fibre Channel/Gigabit Ethernet Compatible• High Bandwidt...

floor Price/Ceiling Price

Part Number:
VSC7809
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Integrated Photodetector/Transimpedance Amplifier Optimized for High-Speed Optical Communications Applications
• Fibre Channel/Gigabit Ethernet Compatible
• High Bandwidth
• Low Input Noise Equivalent Power
• Large Optically Active Area
• Single 3.3V Power Supply



Specifications

Symbol Parameter Limits
VSS Power Supply 6V Required
TSTG Storage Temperature -55°C to 125°C (case temperature under bias)
HSTG Storage Humidity 5 to 95% R.H. (including condensation)
HOP Operating Humidity 8 to 80% R.H. (excluding condensation)
PINC Incident Optical Power +3dBm
IS Impact Shock 500 G. Half Sine Wave
Pulse Duration 1 +/-0.5 ms
3 blows in each direction
VIB Vibration 20 > 2000 > 20Hz, 10 Minutes
10 G. Peak Acceleration
4 Complete Cycles, 3 Perpendicular Axes



Description

The VSC7809 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution for converting light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor's Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in either die form, flat-
windowed packages or in ball-lens packages.

By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete hotodetectors.
Integration also allows superior tracking over process, temperature and voltage between the photodetector and the amplifier, resulting in higher performance. This part can easily be used in developing Fibre Channel Electro-Optic Receivers which exhibit very high performance and ease of use.




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