VSMF3710 Selling Leads, Price trend, VSMF3710 DataSheet download, circuit diagram from SeekIC.com

Features: • High radiant power• High speed: tr = 30 ns• High modulation band width: fc = 12 MHz• Peak wavelength: p = 890 nm• High reliability• Low forward voltage• Suitable for high pulse current application• Wide angle of half intensity• Comp...

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SeekIC No. : 004543657 Detail

VSMF3710: Features: • High radiant power• High speed: tr = 30 ns• High modulation band width: fc = 12 MHz• Peak wavelength: p = 890 nm• High reliability• Low forward voltag...

VSMF3710 Data Sheet

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Part Number:: VSMF3710
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/4/26

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Product Details

Description

Features:

• High radiant power
• High speed: t_r = 30 ns
• High modulation band width: f_c= 12 MHz
• Peak wavelength: _p= 890 nm
• High reliability
• Low forward voltage
• Suitable for high pulse current application
• Wide angle of half intensity
• Compatible with automatic placement equipment
• EIA and ICE standard package
• 8 mm tape and reel standard: GS08 or GS18
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Application

• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors

Specifications

Parameter	Test condition	Symbol	Value	Value
Reverse voltage		V_R	5	V
Forward current		I_F	100	mA
Peak forward current	t_p/T = 0.5, t_p = 100 µs	I_FM	200	mA
Surge forward current	t_p = 100 µs	I_FSM	1	A
Power dissipation		P_V	170	mW
Junction temperature		T_j	100
Operating temperature range		T_amb	- 40 to + 85
Storage temperature range		T_stg	- 40 to + 100
Soldering temperature	acc. figure 8, J-STD-020B	T_sd	260
Thermal resistance junction / ambient		R_thJA	400	K/W

Description

VSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.

DH technology combines high speed with high radiant power at wavelength of 890 nm.

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

VSMF3710

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