Features: • High radiant power• High speed: tr = 30 ns• High modulation band width: fc = 12 MHz• Peak wavelength: p = 890 nm• High reliability• Low forward voltage• Suitable for high pulse current application• Wide angle of half intensity• Comp...
VSMF3710: Features: • High radiant power• High speed: tr = 30 ns• High modulation band width: fc = 12 MHz• Peak wavelength: p = 890 nm• High reliability• Low forward voltag...
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• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
|
Parameter |
Test condition |
Symbol |
Value |
Value |
| Reverse voltage |
VR |
5 | V | |
| Forward current |
IF |
100 |
mA | |
| Peak forward current |
tp/T = 0.5, tp = 100 µs |
IFM |
200 |
mA |
| Surge forward current |
tp = 100 µs |
IFSM |
1 |
A |
| Power dissipation |
PV |
170 |
mW | |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature |
acc. figure 8, J-STD-020B |
Tsd |
260 |
|
| Thermal resistance junction / ambient |
RthJA |
400 |
K/W |
VSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.
DH technology combines high speed with high radiant power at wavelength of 890 nm.