VSSB410S

The VSSB410S is designed as one kind of surface mount trench MOS barrier schottky rectifiers for use in high frequency converters, freewheeling diodes, DC/DC converters and polarity protection applications.

VSSB410S has seven features. (1)Low profile package. (2)Ideal for automated placement. (3)Trench MOS Schottky technology. (4)Low power losses, high efficiency. (5)Low forward voltage drop. (6)Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C. (7)Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC. Those are all the main features.

Some absolute maximum ratings of VSSB410S have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 100V. (2)Its maximum DC forward current would be 4.0A. (3)Its peak forward surge current 10ms single half sine-wave superimposed on rated load would be 80A. (4)Its non-repetitive avalanche energy at Tj=25°C, L=60mH would be 50mJ. (5)Its peak repetitive reverse current at tp=2us, 1kHz, Tj=38°C would be 1.0A. (6)Its operating junction and storage temperature range would be from -40°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VSSB410S are concluded as follow. (1)Its breakdown voltage would be typ 100V. (2)Its instantaneous forward voltage would be typ 0.68V and max 0.77V at If=4.0A, Ta=25°C and would be typ 0.61V and max 0.69V at If=4.0A, Ta=125°C. (3)Its reverse current per diode would be typ 1.5uA at Vr=70V, Ta=25°C and would be typ 1.2mA at Vr=70V, Ta=125°C and would be typ 7uA and max 250uA at Vr=100V, Ta=25°C and would be typ 3.6mA and max 20mA at Vr=100V, Ta=125°C. (3)Its typical junction capacitance would be typ 230pF. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!