VSSB420S

The VSSB420S is designed as one kind of surface mount trench MOS barrier schottky rectifiers for use in high frequency converters, freewheeling diodes, DC/DC converters and polarity protection applications.

VSSB420S has eight features. (1)Low profile package. (2)Ideal for automated placement. (3)Trench MOS Schottky technology. (4)Low power losses, high efficiency. (5)Low forward voltage drop. (6)Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C. (7)Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC. (8)Halogen-free according to IEC 61249-2-21 definition. Those are all the main features.

Some absolute maximum ratings of VSSB420S have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 200V. (2)Its maximum DC forward current would be 4.0A. (3)Its peak forward surge current 10 ms single half sine-wave superimposed on rated load would be 40A. (4)Its voltage rate of change (rated Vr) would be 10000V/us. (5)Its operating junction and storage temperature range would be from -40°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VSSB420S are concluded as follow. (1)Its instantaneous forward voltage would be typ 1.44V and max 1.9V at If=4.0A, Ta=25°C and would be typ 0.71V and max 0.8V at If=4.0A, Ta=125°C. (2)Its reverse current per diode would be typ 3uA at Vr=180V, Ta=25°C and would be typ 0.7mA at Vr=180V, Ta=125°C and would be typ 4uA and max 150uA at Vr=200V, Ta=25°C and would be typ 1.1mA and max 10mA at Vr=200V, Ta=125°C. (3)Its typical junction capacitance would be typ 120pF. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!