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VTE3322LAH

SpecificationsMaximum Temperatures Storage and Operating:.. -40 to 100Continuous Power Dissipation: ..............100 mWDerate above 30: ....................43 mW/Maximum Continuous Current: ............... 50 mADerate above 30 ................... 0.71 mA/Peak Forward Current, 10s, 100 pps ..........

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SeekIC No. : 004544001 Detail

VTE3322LAH: SpecificationsMaximum Temperatures Storage and Operating:.. -40 to 100Continuous Power Dissipation: ..............100 mWDerate above 30: ....................43 mW/Maximum Continuous Current: ..........

VTE3322LAH Data Sheet

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Part Number:
VTE3322LAH
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Specifications

Maximum Temperatures Storage and Operating:.. -40 to 100
Continuous Power Dissipation:  ..............100 mW
Derate above 30: ....................43 mW/
Maximum Continuous Current: ............... 50 mA
Derate above 30 ................... 0.71 mA/
Peak Forward Current, 10s, 100 pps .............3 A
Temp. Coefficient of Power Output (Typ.):......... -.8%/
Maximum Reverse Voltage:..................5.0V
Maximum Reverse Current @ VR = 5V: ........... 10 A
Peak Wavelength (Typical):................ 940 nm
Junction Capacitance @ 0V, 1 MHz (Typ.):.......... 14 pF
Response Time @ IF = 20 mA Rise:1.0sFall: 1.0s
Lead Soldering Temperature:................260
(1.6 mm from case, 5 seconds max.


Description

This VTE3322LAH narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.




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