VTS-11

The VTS-11 P on N large area silicon diodes is primarily inteded for use in the photovoltaic mode.These devices have good response over the visible and IR regions.They have low sereis resistance, moderate shunt resistance and high open circuit voltage at nominal light levels for use in power conversion and battery charging applications. Selected devices have gridded electrodes to enhance high illumination lineairty.All cells with solderable contacts are unmounted and available as chips and with flexible flying leads.

The features of VTS-11 are: (1)visible to IR spectral range; (2)useable with visible and IR LEDs; (3)high open circuit voltage at low light levels; (4)1-2% linearity over 3 to 4 decades; (5)moderate shunt resistance; (6)large area cells; (7)unmounted cells with and without flexible leads; (8)solderable contacts; (9)11 chip size; (10)8 arrays.

The general characteristics of VTS-11 can be summerized as:(1): open circuit voltage(Voc) is 450 mV(100fc,2850K source, 100mW/cm2); (2): spectral response-peak(pk) is 875 nm; (3): application range(range) is 400 nm to 1050 nm; (4): radiometric sensitivity at peak(SPPK) is 0.51 A/W; (5): open circuit voltage(TCOCV) is -2.0mV/(2850K source); (6): shunt resistance(TCRSH) is -8.0%/.