W28J320T

Features: • Low Voltage Operation− VDD = VPP = 2.7V to 3.6V Single Voltage• OTP(One Time Program) Block− 3963 word + 4 word Program only array• User-Configurable * 8 or * 16 Operation• High-Performance Read Access Time− 90 nS (VDD = 2.7V to 3.6V)• Op...

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W28J320T Picture
SeekIC No. : 004544569 Detail

W28J320T: Features: • Low Voltage Operation− VDD = VPP = 2.7V to 3.6V Single Voltage• OTP(One Time Program) Block− 3963 word + 4 word Program only array• User-Configurable * 8 or...

floor Price/Ceiling Price

Part Number:
W28J320T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Low Voltage Operation
− VDD = VPP = 2.7V to 3.6V Single Voltage
• OTP(One Time Program) Block
− 3963 word + 4 word Program only array
• User-Configurable * 8 or * 16 Operation
• High-Performance Read Access Time
− 90 nS (VDD = 2.7V to 3.6V)
• Operating Temperature
− -40° C to +85° C
• Low Power Management
− 4 A (VDD = 3.0V)Typical Standby Current
− Automatic Power Savings Mode Decreases ICCR in Static Mode
− 120 A (VDD = 3.0V, TA =+25° C)Typical Read Current
• Optimized Array Blocking Architecture
− Two 4k-word (8k-byte) Boot Blocks
− Six 4k-word (8k-byte) Parameter Blocks
− Sixty-three 32k-word (64k-byte) Main Blocks
− Top or Bottom Boot Location
• Extended Cycling Capability
− Minimum of 100,000 Block Erase Cycles
• Enhanced Automated Suspend Options
− Word/Byte Write Suspend to Read
− Block Erase Suspend to Word/Byte Write
− Block Erase Suspend to Read
• Enhanced Data Protection Features
− Complete Protection with VPP VPPLK
− Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions
− Block Locking with Command and #WP
− Permanent Locking
• Automated Block Erase, Full Chip Erase, Low Power Management Word/Byte Write and Lock-Bit Configuration
− Command User Interface (CUI)
− Status Register (SR)
• SRAM-Compatible Write Interface
• Industry-Standard Packaging
− 48-Lead TSOP
• Nonvolatile Flash Technology
• CMOS Process (P-type silicon substrate)
• Not designed or rated as radiation hardened



Pinout

  Connection Diagram


Description

The W28J320B/T Flash memory chip is a high-density, cost-effective, nonvolatile, read/write storage device suited for a wide range of applications. It operates of VDD = 2.7V to 3.6V, with VPP of 2.7V to 3.6V or 11.7V to 12.3V. This low voltage operation capability enbales use in low power applications. The IC features a boot, parameter and main-blocked architecture, as well as low voltage and extended cycling. These features provide a highly flexible device suitable for portable terminals and personal computers. Additionally, the enhanced suspend capabilities provide an ideal solution for both code and data storage applications. For secure code storage applications, such as networking where code is either directly executed out of flash or downloaded to DRAM, the device offers four levels of protection. These are: absolute protection, enabled when VPP VPPLK; selective hardware blocking; flexible software blocking; or write protection. These alternatives give designers comprehensive control over their code security needs. The device is manufactured using 0.25 m process technology. It comes in industry-standard packaging, a 48-lead TSOP, which makes it ideal for small real estate applications.




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