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W29EE011

Features: · Single 5 -volt program and erase operations· Fast page -write operations - 128 bytes per page - Page program cycle: 10 mS (max.) - Effective byte -program cycle time: 39 mS - Optional software -protected data write· Fast chip -erase operation: 50 mS· Read access time: 90/150 nS· Page p...

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SeekIC No. : 004544585 Detail

W29EE011: Features: · Single 5 -volt program and erase operations· Fast page -write operations - 128 bytes per page - Page program cycle: 10 mS (max.) - Effective byte -program cycle time: 39 mS - Optional so...

W29EE011 Data Sheet

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Part Number:
W29EE011
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

· Single 5   -volt program and erase operations
· Fast page   -write operations
   - 128 bytes per page
   - Page program cycle: 10 mS (max.)
   - Effective byte   -program cycle time: 39 mS
   - Optional software   -protected data write
· Fast chip   -erase operation: 50 mS
· Read access time: 90/150 nS
· Page program/erase cycles: 1K/10K
· Ten   -year data retention
· Software and hardware data protection
· Low power consumption
   - Active current: 25 mA (typ.)
   - Standby current: 20 mA (typ.)
· Automatic program timing with internal VPP generation
· End of program detection
   - Toggle bit
   - Data polling
· Latched address and data
· TTL compatible I/O
· JEDEC standard byte   -wide pinouts
· Available packages: 32   -pin 600 mil DIP, TSOP, and PLCC


Pinout

Connection Diagram


Specifications

PARAMETER RATING UNIT
Power Supply Voltage to Vss Potential -0.5 to +7.0 V
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +150 °C
D.C. Voltage on Any Pin to Ground Potential Except A9 -0.5 to VDD +1.0 V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V
Voltage on A9 and OE Pin to Ground Potential -0.5 to 12.5 V



Description

The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.




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