W39L040A

Features: • 3V/3.3-Volt Read/Erase/Program Operations− 3.0 ~ 3.6V for 70nS− 2.7 ~ 3.6V for 90nS• Fast Program operation:− Byte-by-Byte programming: 9 S (typ.)• Fast Erase operation:− Chip Erase cycle time: 6 S (typ.)− Sector Erase cycle time: 0.7 S (...

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W39L040A Picture
SeekIC No. : 004544610 Detail

W39L040A: Features: • 3V/3.3-Volt Read/Erase/Program Operations− 3.0 ~ 3.6V for 70nS− 2.7 ~ 3.6V for 90nS• Fast Program operation:− Byte-by-Byte programming: 9 S (typ.)• Fa...

floor Price/Ceiling Price

Part Number:
W39L040A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• 3V/3.3-Volt Read/Erase/Program Operations
− 3.0 ~ 3.6V for 70nS
− 2.7 ~ 3.6V for 90nS
• Fast Program operation:
− Byte-by-Byte programming: 9 S (typ.)
• Fast Erase operation:
− Chip Erase cycle time: 6 S (typ.)
− Sector Erase cycle time: 0.7 S (typ.)
• Read access time: 70/90 nS
• 8 Even sectors with 64K bytes
• Any individual sector can be erased
• Typical program/erase cycles: 10K
• Twenty-year data retention
• Low power consumption
− Active read current: 7 mA at 5MHz (typ.)
− Active program/erase current: 15 mA at 5MHz (typ.)
− Standby current: 0.2 A (typ.)
• End of program detection
− Software method: Toggle bit/#Data polling
• JEDEC standard byte-wide pinouts
• Available packages: 32-pin PLCC Lead free, 32-pin STSOP (8 x 14 mm) Lead free, 32-pin PDIP and 32-pin TSOP (8 x 20 mm)



Pinout

  Connection Diagram


Specifications

PARAMETER RATING UNIT
Operating Temperature 0 to +70
Storage Temperature -65 to +150
Power Supply Voltage to VSS Potential -0.5 to VDD+0.5 V
Voltage on Any Pin to Ground Potential except A9 -0.5 to +4.0 V
Voltage on A9, #OE Pin to Ground Potential -0.5 to +12.5 V
Note: Exposure to conditions beyond those listed under Absolute maximum Ratings may adversely affect the life and reliability of the device.


Description

The W39L040A is a 4Mbit, 3V/3.3V CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The byte-wide (× 8) data appears on DQ7 − DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L040A results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.




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