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W963L6ABN

Features: • Asynchronous SRAM interface• Fast access cycle time:− tRC = 70 nS (-70), 80 nS (-80)• Low power consumption:− IDDA1 = 20 mA Max.− IDDS1 = 70 A Max.• Byte write control• Wide operating conditions:− VDD = +2.3V to +2.7V or+2.7V to +3....

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SeekIC No. : 004545339 Detail

W963L6ABN: Features: • Asynchronous SRAM interface• Fast access cycle time:− tRC = 70 nS (-70), 80 nS (-80)• Low power consumption:− IDDA1 = 20 mA Max.− IDDS1 = 70 A Max....

W963L6ABN Data Sheet

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Part Number:
W963L6ABN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Asynchronous SRAM interface
• Fast access cycle time:
− tRC = 70 nS (-70), 80 nS (-80)
• Low power consumption:
− IDDA1 = 20 mA Max.
− IDDS1 = 70 A Max.
• Byte write control
• Wide operating conditions:
− VDD = +2.3V to +2.7V or
+2.7V to +3.3V
• Temperature
− TA = 0°C to +70°C
− TA = -25°C to +85°C (Extended temperature)
− TA = -40°C to +85°C (Industrial temperature)


Specifications

PARAMETER
SYMBOL
VALUE
UNIT
Voltage of VDD Supply Relative to VSS
VDD
-0.5 to +3.6
V
Voltage at Any Pin Relative to VSS
VIN, VOUT
-0.5 to +3.6
V
Short Circuit Output Current
IOUT
± 50
mA
Storage Temperature
TSTG
-55 to +125
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, emperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.


Description

W963L6ABN is a 8M bits CMOS pseudo static random access memory (Pseudo SRAM), organized as 512K words x 16 bits. Using advanced single transistor DRAM architecture and 0.175 m process technology; W963L6ABN delivers fast access cycle time and low power consumption. It is suitable for mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and power dissipation is most concerned.




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