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W964B6BBN

Features: • Asynchronous SRAM interface• Fast access cycle time:− tRC = 70 nS (-70), 80 nS (-80)• Low power consumption:− IDDA1 = 20 mA Max.− IDDS1 = 70 A Max.• Byte write control• Wide operating conditions:− VDD = +2.3V to +2.7V• Tempera...

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SeekIC No. : 004545340 Detail

W964B6BBN: Features: • Asynchronous SRAM interface• Fast access cycle time:− tRC = 70 nS (-70), 80 nS (-80)• Low power consumption:− IDDA1 = 20 mA Max.− IDDS1 = 70 A Max....

W964B6BBN Data Sheet

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Part Number:
W964B6BBN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

• Asynchronous SRAM interface
• Fast access cycle time:
− tRC = 70 nS (-70), 80 nS (-80)
• Low power consumption:
− IDDA1 = 20 mA Max.
− IDDS1 = 70 A Max.
• Byte write control
• Wide operating conditions:
− VDD = +2.3V to +2.7V
• Temperature
− TA = 0°C to +70°C
− TA = -25°C to +85°C (Extended temperature)
− TA = -40°C to +85°C (Industrial temperature)


Specifications

PARAMETER SYMBOL VALUE UNIT
Voltage of VDD Supply Relative to VSS VDD -0.5 to +3.6 V
Voltage at Any Pin Relative to VSS VIN, VOUT -0.5 to +3.6 V
Short Circuit Output Current IOUT ±50 mA
Storage Temperature TSTG -55 to +125

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, emperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.




Description

W964B6BBN is a 16M bits CMOS pseudo static random access memory (Pseudo SRAM), organized as 1M words x 16 bits. Using advanced single transistor DRAM architecture and 0.175 m process technology; W964B6BBN delivers fast access cycle time and low power consumption. It is suitable for mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and power dissipation is most concerned




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