W986432DH

Features: · 3.3V ±0.3V power supply· 524288 words ´ 4 banks ´ 32 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8, and full page· Sequential and Interleave burst· Burst read, single write operation· Byte data controlled by DQM· Power-down...

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W986432DH Picture
SeekIC No. : 004545370 Detail

W986432DH: Features: · 3.3V ±0.3V power supply· 524288 words ´ 4 banks ´ 32 bits organization· Auto Refresh and Self Refresh· CAS latency: 2 and 3· Burst Length: 1, 2, 4, 8, and full page· Sequenti...

floor Price/Ceiling Price

Part Number:
W986432DH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

· 3.3V ±0.3V power supply
· 524288 words ´ 4 banks ´ 32 bits organization
· Auto Refresh and Self Refresh
· CAS latency: 2 and 3
· Burst Length: 1, 2, 4, 8, and full page
· Sequential and Interleave burst
· Burst read, single write operation
· Byte data controlled by DQM
· Power-down Mode
· Auto-precharge and controlled precharge
· 4K refresh cycles/64 mS
· Interface: LVTTL
· Packaged in 86-pin TSOP II, 400 mil - 0.50



Pinout

  Connection Diagram


Specifications

ITEM SYMBOL
RATING
UNIT
NOTES
Input, Output Voltage VIN,VOUT
-0.3~ Vcc +0.3
V
1
Power Supply Voltage VCC,VCCQ
-0.3~4.6
V
1
Operating Temperature TOPR
0~70
°C
1
Storage Temperature TSTG
-55~150
°C
1
Soldering Temperature(10s) TSOLDER
260
°C
1
Power Dissipation PD
1
W
1
Short Circuit Output Current IOUT
50
mA
1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.


Description

W986432DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words× 4 banks× 32 bits. Using pipelined architecture and 0.175 mm process technology, it delivers a data bandwidth of up to 800M bytes per second (5). For different application, W986432DH is sorted into four speed grades: -5, -55, -6, -7,-8.

Accesses to the SDRAM W986432DH are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM W986432DH internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W986432DH is ideal for main memory in high performance applications.




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