Position: Home  > All Categories> Integrated Circuits (ICs) > WFP4N60

WFP4N60

Features: RDS(on) (Max 2.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V ID Continuous Drain Current(@T...

product image

WFP4N60 Picture
See larger image
SeekIC No. : 004545669 Detail

WFP4N60: Features: RDS(on) (Max 2.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150)Specifications Symbol ...

WFP4N60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
WFP4N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

RDS(on) (Max 2.5 )@VGS=10V
Gate Charge (Typical 15nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V
ID Continuous Drain Current(@TC = 25) 4.0 A
Continuous Drain Current(@TC = 100) 2.5 A
IDM Drain Current Pulsed                    (Note 1) 16 A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy  (Note 2) 240 mJ
EAR Repetitive Avalanche Energy       (Note 1) 10 mJ
dv/dt Peak Diode Recovery dv/dt       (Note 3) 4.5 V/ns
PD Total Power Dissipation(@TC = 25 ) 100 W
Derating Factor above 25 0.8 W/
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300



Description

This Power MOSFET of the WFP4N60 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power facto  correction, electronic lamp ballasts based on half bridge topology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Filters
PICO2205A
PICO2204A
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Line Protection, Backups
BX0023
A20B-1008-0550
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Tools
TCP202
G084SN05 V.3
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more