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WFP50N06

Features: RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 60 V ID Continuous...

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WFP50N06: Features: RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C)Specifications S...

WFP50N06 Data Sheet

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Part Number:
WFP50N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

RDS(on) (Max 0.022 )@VGS=10V
Gate Charge (Typical 32nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)


Specifications

Symbol
 Parameter
Value
Units
VDSS
 Drain to Source Voltage
60
V
ID
 Continuous Drain Current(@TC = 25°C)
50
A
Continuous Drain Current(@TC = 100°C)
35
A
IDM
 Drain Current Pulsed (Note 1)
200
A
VGS
 Gate to Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy (Note 2)
493
mJ
EAR
 Repetitive Avalanche Energy (Note 1)
12.0
mJ
dv/dt
 Peak Diode Recovery dv/dt (Note 3)
7.0
V/ns
PD
 Total Power Dissipation(@TC = 25 °C)
120
W
Derating Factor above 25 °C
0.8
W/°C
TSTG, TJ
 Operating Junction Temperature & Storage Temperature
- 55 ~ 175
°C
TL
 Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C



Description

This Power MOSFET of the WFP50N06 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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