Features: RDS(on) (Max 0.18 )@VGS=10V Gate Charge (Typical 45nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 200 V ID Continuous Drain Cu...
WFP640: Features: RDS(on) (Max 0.18 )@VGS=10V Gate Charge (Typical 45nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symb...
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| Symbol | Characteristic | Value | Units |
| VDSS | Drain-to-Source Voltage | 200 | V |
| ID | Continuous Drain Current (TC=25°C) | 18 | A |
| Continuous Drain Current (TC=100°C) | 11.4 | A | |
| IDM | Drain Current-Pulsed (Note 1) | 72 | A |
| VGS | Gate-to-Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 250 | mJ |
| EAR | Repetitive Avalanche Energy (Note 1) | 13.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Total Power Dissipation(@TC = 25 °C) | 139 | W |
| Derating Factor above 25 °C | 1.11 | W/ | |
| TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 ~ 150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
This Power MOSFET of the WFP640 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices of the WFP640 are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.