WFP830

Features:

RDS(on) (Max 1.4 )@V_GS=10V
Gate Charge (Typical 25nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150)


Specifications

Symbol	Parameter	Value	Units
VDSS	Drain to Source Voltage	500	V
ID	Continuous Drain Current(@TC = 25)	5.0	A
	Continuous Drain Current(@TC = 100)	3.0	A
IDM	Drain Current Pulsed                                         (Note 1)	20	A
VGS	Gate to Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy                        (Note 2)	292	mJ
EAR	Repetitive Avalanche Energy                             (Note 1)	8.75	mJ
dv/dt	Peak Diode Recovery dv/dt                                (Note 3)	5.5	V/ns
PD	Total Power Dissipation(@TC = 25)	87.5	W
	Derating Factor above 25	0.70	W/
TSTG, TJ	Operating Junction Temperature & Storage Temperature	- 55~150
TL	Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.	300

Description

This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology of the WFP830 has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.