WSF128K16-72

The WSF128K16-72 is designed as one kind of 128K x 32 SRAM / flash module. Features of this device are:(1)access times of 25 ns (SRAM) and 70, 90 and 120 ns (flash);(2)128k x 32 SRAM;(3)organized as 128K x 32 of SRAM and 128K x 32 of flash memory with common data bus;(4)low power CMOS;(5)commercial, industrial and military temperature ranges;(6)TTL compatible inputs and outputs;(7)built-in decoupling caps and multiple ground pins for low noise operation;(8)weight - 13 grams typical;(9)page program operation and internal program control time;(10)hardware write protection;(11)10000 erase / program cycles;(12)5 volt programming: 5 V +/- 10 % supply;(13)embedded erase and program algorithms.

The absolute maximum ratings of the WSF128K16-72 can be summarized as:(1)operating temperature: -55 to +125 ;(2)storage temperature: -65 to +150 ;(3)signal voltage relative to GND: -0.5 V to +7.0 V;(4)junction temperature: 150 ;(5)supply voltage: -0.5 V to +7.0 V.

The electrical characteristics of this device can be summarized as:(1)input leakage current: 10 uA;(2)output leakage current: 10 uA;(3)SRAM operating supply current x 32 mode: 670 mA;(4)stand by current: 80 mA;(5)SRAM output low voltage: 0.4 V;(6)SRAM output high voltage: 2.4 V;(7)flash Vcc active current for read: 220 mA;(8)flash Vcc active current for program or erase: 280 mA;(9)flash output low voltage: 0.45 V;(10)flash low Vcc lock out voltage: 3.2 V. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .