Features: *Super high dense cell design for low RDS(ON)*Rugged and Reliable*SO-8 Package R <6 mΩ@VGS=10V DS(ON) R <8.5 mΩ@VGS=4.5V DS(ON)PinoutSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDG 30 V Gate-Source Voltage VGS ±20 V Drain Cur...
WT4884AM: Features: *Super high dense cell design for low RDS(ON)*Rugged and Reliable*SO-8 Package R <6 mΩ@VGS=10V DS(ON) R <8.5 mΩ@VGS=4.5V DS(ON)PinoutSpecifications Parameter Symbo...
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| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage | VDG | 30 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current-Continuous @TC=25 -Pulsed a |
ID | 12 | A |
| IDM | 44 | ||
| Drain-Source Diode Forward Current | IS | 1.7 | A |
| Maximum Power Dissipation @Tc = 25 | PD | 2.5 | W |
| Maximax Junction-to-Ambient (1) | RJA | 50 | /W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 |