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WV3EG216M64STSU

Features: ·Double-data-rate architecture·PC2700@CL=2.5·Bi-directional data strobes (DQS)·Differential clock inputs (CK & CK#)·Programmable Read Latency 2,2,5 (clock)·Programmable Burst Length (2,4,8)·Programmable Burst type (sequential & interleave)·Edge aligned data output, center aligned...

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SeekIC No. : 004546954 Detail

WV3EG216M64STSU: Features: ·Double-data-rate architecture·PC2700@CL=2.5·Bi-directional data strobes (DQS)·Differential clock inputs (CK & CK#)·Programmable Read Latency 2,2,5 (clock)·Programmable Burst Length (2...

WV3EG216M64STSU Data Sheet

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Part Number:
WV3EG216M64STSU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

·Double-data-rate architecture
·PC2700@CL=2.5
·Bi-directional data strobes (DQS)
·Differential clock inputs (CK & CK#)
·Programmable Read Latency 2,2,5 (clock)
·Programmable Burst Length (2,4,8)
·Programmable Burst type (sequential & interleave)
·Edge aligned data output, center aligned data input
·Auto and self refresh, (8K/64ms refresh)
·Serial presence detect with EEPROM
·Power Supply: VCC/VCCQ: 2.5V ± 0.20V
·Dual Rank
·Standard 200 pin SO-DIMM package
    • Package height options: D4: 31.75mm (1.25")


Specifications

Symbol
Parameter
Rating
 Units
VIN, VOUT
Voltage on any pin relative to VSS
-0.5 ~ 3.6
V
VCC
Voltage on VCC supply relative to VSS
-0.5 ~ 3.6
V
VCCQ
Voltage on VCCQ supply relative to VSS
-0.5 ~ 3.6
V
TSTG
Storage Temperature
-55 ~ +150
°C
TA
Operating Temperature
0 ~ 70
°C
PD
Power Dissipation
8
W
IOS
Short Circuit Current
50
mA
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The WV3EG216M64STSU is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR SDRAMs in 66 pin TSOP package mounted on a 200 Pin FR4 substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the same device to be useful for a variety of high bandwidth,high performance memory system applications.

* This product is under development, is not qualifi ed or characterized and is subject to change without notice.




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