X28HC64

Features:

*55ns Access Time
*Simple Byte and Page Write
-Single 5V Suppl
-CNo External High Voltages orV_PP Control Circuits
-Self-Time
-No Erase Before Wr
-No Complex Programming Algorithm
-No Overerase Proble
*Low Power CMOS
-40 mA Active Current Max
-200 A Standby Current Max.
*Fast Write Cycle Times
-64 Byte Page Write Operatio
-Byte or Page Write Cycle: 2ms Typica
-Complete Memory Rewrite: 0.25 sec. Typica
-Effective Byte Write Cycle Time: 3s Typical
*Software Data Protection
*End of Write Detection
-DATA Polling
-(TM)Toggle Bit
*High Reliability
-Endurance: 100,000 Cycle
-Data Retention: 100 Years
*JEDEC Approved Byte-Wide Pinout

Pinout






Specifications

Temperature under Bias
X28HC64.....................................-10 to +85
X28HC64I, X28HC64M..............-65 to +135
Storage Temperature..................-65 to +150
Voltage on any Pin with
Respect to V_SS ................................-1V to +7V
D.C. Output Current......................................5mA
Lead Temperature
(Soldering, 10 seconds)............................300





Description

The X28HC64 is an 8K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32s/byte write cycle, and enabling the entire memory to be typically written in 0.25 seconds. The X28HC64 also features DATA Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersils hardware write protect capability. Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.