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XLNA2S.02

Features: • Low Noise 1.3 dB N.F.• High Gain 22 dB Gain• Frequency Range : 9 - 12 GHz• 50 Zin / Zout• 10 dB Input / Output Return Loss• 8 dBm Output Power at 1dB gain compression• Chip size : 1.4 mm X 0.9 mm• Substrate Thickness : 75 m• Bond P...

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XLNA2S.02: Features: • Low Noise 1.3 dB N.F.• High Gain 22 dB Gain• Frequency Range : 9 - 12 GHz• 50 Zin / Zout• 10 dB Input / Output Return Loss• 8 dBm Output Power at 1dB...

XLNA2S.02 Data Sheet

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Part Number:
XLNA2S.02
Supply Ability:
5000

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Product Details

Description



Features:

• Low Noise 1.3 dB N.F.
• High Gain 22 dB Gain
• Frequency Range : 9 - 12 GHz
• 50 Zin / Zout
• 10 dB Input / Output Return Loss
• 8 dBm Output Power at 1dB gain compression
• Chip size : 1.4 mm X 0.9 mm
• Substrate Thickness : 75 m
• Bond Pad dimensions 100 m x 100 m


Specifications

Symbol Parameters/Conditions Min Max Units
Vd 1 2 Drain Supply Voltage   5 Volts
Vg 1 2 Gate Supply Voltage -0.6 0.4 Volts
Id total Total drain current   60 mA
Ig total Total gate current   0.1 mA
Pin RF input power   30 dBm
T ch Operating channel temperature   150
T max Max assembly temperature   300*
T stg Max storage temperature -65 165
T base Maximum base plate temperature   140

* 30 minute maximum




Description

The Rockwell XLNA2S.02 is a PHEMT low noise amplifier that operates from 9 to 12 GHZ .This 2 stage amplifier has 22 dB nominal gain with 1.3 dB nominal noise figure and 8 dBm P1dB compression output power. This MMIC is unconditionally stable.




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