XM1003-BD

Features: Sub-harmonic Image Reject MixerGaAs HBT Technology9.0 dB Conversion Loss18.0 dB Image Rejection100% On-Wafer RF Testing100% Visual Inspection to MIL-STD-883Method 2010Specifications Input Power (RF Pin) +20 dBm Input Power (IF Pin) +20 dBm Storage Temperature (Tstg) -65 to ...

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SeekIC No. : 004548465 Detail

XM1003-BD: Features: Sub-harmonic Image Reject MixerGaAs HBT Technology9.0 dB Conversion Loss18.0 dB Image Rejection100% On-Wafer RF Testing100% Visual Inspection to MIL-STD-883Method 2010Specifications I...

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Part Number:
XM1003-BD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

Sub-harmonic Image Reject Mixer
GaAs HBT Technology
9.0 dB Conversion Loss
18.0 dB Image Rejection
100% On-Wafer RF Testing
100% Visual Inspection to MIL-STD-883
Method 2010





Specifications

Input Power (RF Pin) +20 dBm
Input Power (IF Pin) +20 dBm
Storage Temperature (Tstg) -65 to +150
Operating Temperature (Ta) -55 to +125





Description

Mimix Broadband's 32.0-42.0 GHz GaAs MMIC XM1003-BD sub-harmonic image reject mixer can be used as an upor down-converter. The XM1003-BD has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 2 m GaAs HBT XM1003-BD model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

The chip XM1003-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This XM1003-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.






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