Features: • Two elements incorporated into one package (J-FET + Tr)• Reduction of the mounting area and assembly cost by one half• Low-frequency and low-noise J-FETSpecifications Parameter Symbol Ratings Unit FET Gate to drain voltage VGDS -50 V Drain current I...
XN08081: Features: • Two elements incorporated into one package (J-FET + Tr)• Reduction of the mounting area and assembly cost by one half• Low-frequency and low-noise J-FETSpecifications ...
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| Parameter | Symbol | Ratings | Unit | |
| FET | Gate to drain voltage |
VGDS | -50 | V |
| Drain current |
ID | 20 | mA | |
| Gate current | IG | 10 | mA | |
| Tr | Collector to base voltage |
VCBO | 50 | V |
| Collector to emitter voltage |
VCEO | 50 | V | |
| Collector current | IC | 100 | mA | |
| Overall | Total power dissipation | PT | 300 | mW |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | 55 to +150 | ||