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XN09D61

Features: • Two elements incorporated into one package (Tr + SBD)• Reduction of the mounting area and assembly cost by one half• Low collector-emitter saturation voltage VCE(sat)Specifications Parameter Symbol Rating Unit Tr Collector-base voltage(Emitter open) VCB...

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XN09D61: Features: • Two elements incorporated into one package (Tr + SBD)• Reduction of the mounting area and assembly cost by one half• Low collector-emitter saturation voltage VCE(sat)Sp...

XN09D61 Data Sheet

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Part Number:
XN09D61
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Two elements incorporated into one package (Tr + SBD)
• Reduction of the mounting area and assembly cost by one half
• Low collector-emitter saturation voltage VCE(sat)


Specifications

Parameter Symbol Rating Unit
Tr Collector-base voltage
(Emitter open)
VCBO
-15
V
Collector-emitter voltage
(Base open)
VCEO
-15
V
Emitter-base voltage
(Collector open)

VEBO
-5
V
Collector current
IC
-1.5
A
Peak collector current
ICP
-3
A
SBD Reverse voltage
VR
20
V
Repetitive peak reverse voltage
VRRM
25
V
Forward current (Average)
IF(AV)
700
mA
Non-repetitive peak
forward surge current
IFSM
2
A
Overall Total power dissipation *
PT
600
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Note) *: Measuring on ceramic substrate at 15 mm * 15 mm * 0.6 mm


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