Features: • Two elements incorporated into one package (Drain-coupled FETs)• Reduction of the mounting area and assembly cost by one half• Low-frequency and low-noise J-FETSpecifications Parameter Symbol Ratings Unit Ratingofelement Gate to drain voltage VGDS -50 V...
XN0D873: Features: • Two elements incorporated into one package (Drain-coupled FETs)• Reduction of the mounting area and assembly cost by one half• Low-frequency and low-noise J-FETSpecific...
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| Parameter | Symbol | Ratings | Unit | |
| Rating of element |
Gate to drain voltage | VGDS | -50 | V |
| Drain current | ID | 3 | mA | |
| Gate current | IG | 10 | mA | |
| Overall | Total power dissipation | PT | 300 | mW |
| Channel temperature | Tch | 150 | ||
| Storage temperature | Tstg | 55 to +150 | ||