XP01113

The XP01113 is designed as silicon PNP epitaxial planer transistor for switching/digital circuits.

XP01113 has two features. The first one is two elements incorporated into one package (emitter-coupled transistors with built-in resistor). The second one is reduction of the mounting area and assembly cost by one half. That are all the main features.

Also some absolute maximum ratings of XP01113 have been concluded into several points as follow. The first one is about its collector to base voltage which would be 50V. The second one is about its collector to emitter voltage which would be 50V. The third one is about its collector current which would be 100mA. The fourth one is about its total power dissipation which would be 150mW. The fifth one is about its junction temperature which would be 150°C. The sixth one is about its storage temperature range which would be from 55 to +150°C.

Also some electrical characteristics about XP01113. The first one is about its collector to base voltage which would be min -50V. The second one is about its collector to emitter voltage which would be min 50V. The third one is about its collector cutoff current which would be max -0.1uA with conditions of Vcb=50V, Ie=0 and would be max -0.5uA with condition of Vce=50V, Ie=0. The fourth one is about its emitter cutoff current which would be max -0.2mA. The fifth one is about its forward current transfer ratio which would be min 80. The sixth one is about its forward current transfer hFE ratio which would be min 0.5 and typ 0.99. The seventh one is about its collector to emitter saturation voltage which would be max -0.25V. The eighth one is about its output voltage high level which would be min -4.9V. The ninth one is about its output voltage low level which would be max -0.2V. The tenth one is about its transition frequency which would be typ 80MHz. And so on. For more information about XP01113 please contact us.