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XP131A0526SR

Features: Low on-state resistance: Rds(on)=0.017(Vgs=10V) Rds(on)=0.026(Vgs=4.5V)Ultra high-speed switchingOperational Voltage: 4.5VHigh density mounting: SOP-8Application􀀁Notebook PCs􀀁Cellular and portable phones􀀁On-board power supplies􀀁Li-ion battery systemsPi...

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XP131A0526SR: Features: Low on-state resistance: Rds(on)=0.017(Vgs=10V) Rds(on)=0.026(Vgs=4.5V)Ultra high-speed switchingOperational Voltage: 4.5VHigh density mounting: SOP-8Application􀀁Notebook PCsh...

XP131A0526SR Data Sheet

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Part Number:
XP131A0526SR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low on-state resistance: Rds(on)=0.017(Vgs=10V)
                                         Rds(on)=0.026(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage: 4.5V
High density mounting: SOP-8


Application

􀀁Notebook PCs
􀀁Cellular and portable phones
􀀁On-board power supplies
􀀁Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Vdss

30

V

Gate-Source Voltage

Vgss

±8

V

Drain Current (DC)

Id

10

A

Drain Current (Pulse)

Idp

30

A

Reverse Drain Current

Idr

10

A

Continuous Channel
Power Dissipation (note)

Pd

2.5

W

Channel Temperature

Tch

150

Storage Temperature

Tstg

-55~150




Description

The XP131A0526SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the XP131A0526SR can be efficiently set thereby saving energy.

The small SOP-8 package of XP131A0526SR makes high density mounting possible.


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