XP134A02A1SR

Features:

Low on-state resistance: Rds(on)=0.11(Vgs=-4.5V)
                                          Rds(on)=0.2(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage: -2.5V
High density mounting: SOP-8


Application

 Notebook PCs
 Cellular and portable phones
 On-board power supplies
 Li-ion battery systems


Pinout




Specifications

PARAMETER	SYMBOL	RATINGS	UNITS
Drain-Source Voltage	Vdss	-20	V
Gate-Source Voltage	Vgss	±12	V
Drain Current (DC)	Id	-4	A
Drain Current (Pulse)	Idp	-12	A
Reverse Drain Current	Idr	-4	A
Continuous Channel Power Dissipation (note)	Pd	2	W
Channel Temperature	Tch	150
Storage Temperature	Tstg	-55~150

Description

The XP134A02A1SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Two FET devices of XP134A02A1SR are built into the one package.

Because high-speed switching XP134A02A1SR is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package of XP134A02A1SR makes high density mounting possible.