XP151A13A0MR

MOSFET N-CH 20V 1A SOT23

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XP151A13A0MR Picture
SeekIC No. : 003431706 Detail

XP151A13A0MR: MOSFET N-CH 20V 1A SOT23

floor Price/Ceiling Price

US $ .13~.13 / Piece | Get Latest Price
Part Number:
XP151A13A0MR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.13
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: - Manufacturer: Torex Semiconductor Ltd
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 220pF @ 10V
Power - Max: 500mW Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 1A
Supplier Device Package: SOT-23
Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds: 220pF @ 10V
Manufacturer: Torex Semiconductor Ltd


Features:

Low on-state resistance : Rds (on) = 0.1 ( Vgs = 4.5V )
                                           Rds (on) = 0.14 ( Vgs = 2.5V )
                                           Rds (on) = 0.25 ( Vgs = 1.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : 1.5V
High density mounting : SOT - 23



Application

􀀀Notebook PCs
􀀀Cellular and portable phones
􀀀On - board power supplies
􀀀Li - ion battery systems



Pinout

  Connection Diagram


Specifications

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Vdss

20

V

Gate-Source Voltage

Vgss

±8

V

Drain Current (DC)

Id

1

A

Drain Current (Pulse)

Idp

4

A

Reverse Drain Current

Idr

1

A

Continuous Channel
Power Dissipation (note)

Pd

0.5

W

Channel Temperature

Tch

150

Storage Temperature

Tstg

-55~150




Description

The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 package makes high density mounting possible.




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