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XP161A02A1PR

Features: Low on-state resistance: Rds(on)=0.11(Vgs=4.5V) Rds(on)=0.17(Vgs=2.5V)Ultra high-speed switchingOperational Voltage: 2.5VHigh density mounting: SOT-89ApplicationNotebook PCsCellular and portable phonesOn-board power suppliesLi-ion battery systemsPinoutSpecifications PARAMETER S...

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XP161A02A1PR: Features: Low on-state resistance: Rds(on)=0.11(Vgs=4.5V) Rds(on)=0.17(Vgs=2.5V)Ultra high-speed switchingOperational Voltage: 2.5VHigh density mounting: SOT-89ApplicationNotebook PCsCellular and po...

XP161A02A1PR Data Sheet

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Part Number:
XP161A02A1PR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low on-state resistance: Rds(on)=0.11(Vgs=4.5V)
                                          Rds(on)=0.17(Vgs=2.5V)
Ultra high-speed switching
Operational Voltage: 2.5V
High density mounting: SOT-89


Application

 Notebook PCs
 Cellular and portable phones
 On-board power supplies
 Li-ion battery systems


Pinout

Connection Diagram


Specifications

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Vdss

20

V

Gate-Source Voltage

Vgss

±12

V

Drain Current (DC)

Id

3

A

Drain Current (Pulse)

Idp

9

A

Reverse Drain Current

Idr

3

A

Continuous Channel
Power Dissipation (note)

Pd

2

W

Channel Temperature

Tch

150

Storage Temperature

Tstg

-55~150




Description

The XP161A02A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the XP161A02A1PR can be efficiently set thereby saving energy.

The small SOT-89 package of XP161A02A1PR makes high density mounting possible.


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