XR1002-QB

XR1002-QB Mimix Broadband's 18.0-30.0 GHz GaAs MMIC receiver has a 12.0 dB gain control range, a noise figure of 3.5 dB and 25.0 dB image rejection across the band. This device is a three stage LNA followed by a single transistor "Tee" attenuator and an image reject fundamental resistive HEMT mixer.

At high signal levels the radio AGC system can be used to reduce the receiver gain improving the IIP3 providing for minimum distortion at modulation schemes as high as 256 QAM (ETSI-see Technical Note 1).

The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.