YTF830

The YTF830 is designed as toshiba field effect transistor of silicon N channel MOS typ. Typical applications is high speed, high current switching applications and chopper regulator, DC-DC converter and motor drive applications.

YTF830 has four features. (1)Low drain-source ON resistance which would be typ 1.3. (2)High forward transfer admittance which would be typ 3.25S. (3)Low leakage current which would be max +/-500nA for Igss at Vgs=+/-20V and max 250uA for Idss at Vds=500V. (4)Enhancement mode which would be from 2.0V to 4.0V at Vds=Vgs, Id=250uA. Those are all the main features.

Some absolute maximum ratings of YTF830 have been concluded into several points as follow. (1)Its drain to source voltage would be 500V. (2)Its drain to gate voltage would be 500V. (3)Its gate to source voltage would be +/-20V. (4)Its drain current would be 4.5A for DC 25°C and would be 3A for DC 100°C and would be 18A for pulse. (5)Its inductive current clamped would be 18A. (6)Its drain power dissipation would be 75W. (7)Its channel temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of YTF830 are concluded as follow. (1)Its gate leakage current would be max +/-500nA. (2)Its drain cutoff current would be max 250uA. (3)Its drain to source breakdown voltage would be min 500V. (4)Its forward threshold voltage would be min 2.0V and max 4.0V. (5)Its on-state drain current would be min 4.5A. (6)Its drain to source on resistance would be typ 1.3ohms and max 1.5ohms. (7)Its forward transfer admittance would be min 2.5S and typ 3.25S. (8)Its input capacitance would be typ 600pF and max 800pF. (9)Its reverse transfer capacitance would be typ 40pF and max 60pF. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!