Z0103MA

Triacs BULKSL TRIAC

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Z0103MA Picture
SeekIC No. : 00203357 Detail

Z0103MA: Triacs BULKSL TRIAC

floor Price/Ceiling Price

Part Number:
Z0103MA
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Rated Repetitive Off-State Voltage VDRM : 600 V Off-State Leakage Current @ VDRM IDRM : 0.5 mA
Gate Trigger Voltage (Vgt) : 1.3 V Gate Trigger Current (Igt) : 5 mA
Holding Current (Ih Max) : 7 mA Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Breakover Current IBO Max :
On-State RMS Current (It RMS) :
Rated Repetitive Off-State Voltage VDRM : 600 V
Gate Trigger Voltage (Vgt) : 1.3 V
Mounting Style : Through Hole
Gate Trigger Current (Igt) : 5 mA
Holding Current (Ih Max) : 7 mA
Package / Case : TO-92
Packaging : Bulk
Off-State Leakage Current @ VDRM IDRM : 0.5 mA


Description

The Z0103MA is designed as one kind of Passivated triac that is available in conventional and surface mounting packages and in a range of gate current sensitivities for optimum performance. This device can be used in high bidirectional transient and blocking voltage capability applications such as Home appliances, Fan controllers, Small motor control and Small loads in industrial process control.

Features of the Z0103MA are:(1)Blocking voltage to 800 V (NA and NN types);(2)1 A on-state RMS current. And the absolute maximum ratings of this device can be summarized as:(1)repetitive peak off-state voltage: 600 V;(2)repetitive peak reverse voltage: 600 V;(3)non-repetitive peak on-state current: 8 or 8.5 A;(4)RMS on-state current SOT223: 1 A;(5)rate of rise of on-state current: 20 A/us;(6)peak gate current: 1.0 A;(7)peak gate power: 2.0 W;(8)average gate power: 0.1 W;(9)storage temperature: -40 to +150 °C;(10)junction temperature: -40 to +125 °C.

The thermal characteristics of this device Z0103MA can be summarized as:(1)thermal resistance from junction to solder point for SOT223: 25 K/W;(2)thermal resistance from junction to lead for SOT54B (TO-92): 60 K/W;(3)thermal resistance from junction to ambient SOT223: 60 K/W;(4)thermal resistance from junction to ambient SOT54B (TO-92): 150 K/W. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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