ZMY 100 G

Specifications Power dissipation Verlustleistung TA = 25 Ptot 1.0 W 1) Operating junction temperature Sperrschichttemperatur Tj 50...+175 Storage temperature Lagerungstemperatur TS 50...+175 Thermal resistance junction to ambient airWärmewiderstand Sperrschicht ...

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ZMY 100 G Picture
SeekIC No. : 004551699 Detail

ZMY 100 G: Specifications Power dissipation Verlustleistung TA = 25 Ptot 1.0 W 1) Operating junction temperature Sperrschichttemperatur Tj 50...+175 Storage temperature Lagerungstemperatu...

floor Price/Ceiling Price

Part Number:
ZMY 100 G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Specifications

Power dissipation Verlustleistung TA = 25 Ptot 1.0 W 1)
Operating junction temperature Sperrschichttemperatur   Tj 50...+175
Storage temperature Lagerungstemperatur   TS 50...+175
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht umgebende Luft
  RthA < 150 K/W 1)


1) Mounted on P.C. board with 50 mm2 copper pads at each terminal
    Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses Gemessen mit Impulsen
3) The ZMY 1 G is a diode operated in forward. Hence, the index of all parameters should be "F" instead of "Z".
The cathode, indicated by a white ring is to be connected to the negative pole.
Die ZMY 1 G ist eine in Durchlaß betriebene Si-Diode. Daher ist bei allen Kenn- und Grenzwerten der Index "F" anstatt "Z" zu setzten. Die durch den weißen Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden.




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