ZTX855

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Maximum Operating Temperature : + 200 C
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 150 V
Maximum Operating Frequency : 90 MHz
Package / Case : E-Line


Features:

* 150 Volt V_CEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* P_tot= 1.2 Watt




Specifications

PARAMETER	SYMBOL	VALUE	UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range	VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg	250 150 6 10 4 1.58 1.2 -55 to +200	V V V A A W W °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum