MOSFET N-Chnl 350V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 350 V |
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 0.09 A |
| Configuration : | Single | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-92-3 |
| Packaging : | Bulk |
| PARAMETER |
SYMBOL |
VALUE |
UNIT |
| Drain-Source Voltage |
VDS |
350 |
V |
| Continuous Drain Current at Tamb=25°C |
ID |
90 |
mA |
| Pulsed Drain Current |
IDM |
1 |
A |
| Gate Source Voltage |
VGS |
±20 |
V |
| Power Dissipation at Tamb=25°C |
Ptot |
700 |
mW |
| Operating and Storage Temperature Range |
Tj,Tstg |
-55 to +150 |
°C |