MOSFET N-Chnl 60V
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.1 A | ||
| Resistance Drain-Source RDS (on) : | 330 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | E-Line | Packaging : | Bulk |
|
PARAMETER |
SYMBOL |
VALUE |
UNIT |
| Drain-Source Voltage |
VDS |
60 |
V |
| Continuous Drain Current at Tamb=25°C |
ID |
1.1 |
A |
| Practical Continuous Drain Current at Tamb=25°C |
IDP |
1.3 |
A |
| Pulsed Drain Current |
IDM |
15 |
A |
| Gate-Source Voltage |
VGS |
± 20 |
V |
| Power Dissipation at Tamb=25°C |
Ptot |
850 |
mW |
| Practical Power Dissipation at Tamb=25°C* |
Ptotp |
1.13 |
W |
| Operating and Storage Temperature Range |
Tj;Tstg |
-55 to +150 |
°C |