ZVN4525E6

Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• Complementary P-channel Type ZVP4525E6• SOT23-6 packageApplication• Earth Recall and dialling switches• Electronic hook switches• High Volta...

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SeekIC No. : 004552259 Detail

ZVN4525E6: Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• Complementary P-channel Type ZVP4525E6• SOT23-6 packageApp...

floor Price/Ceiling Price

Part Number:
ZVN4525E6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2019/8/18

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Product Details

Description



Features:

• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• Complementary P-channel Type ZVP4525E6
• SOT23-6 package





Application

• Earth Recall and dialling switches
• Electronic hook switches
• High Voltage Power MOSFET Drivers
• Telecom call routers
• Solid state relays





Pinout

  Connection Diagram




Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
250
V
Gate Source Voltage
VGS
±40
V
Continuous Drain Current (VGS=10V; TA=25°C)(a)
(VGS=10V; TA=70°C)(a)
ID
ID
230
183
mA
mA
Pulsed Drain Current (c)
IDM
1.44
A
Continuous Source Current (Body Diode)
IS
1.1
A
Pulsed Source Current (Body Diode)
ISM
1.44
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Operating and Storage Temperature Range
Tj;Tstg
-55 to +150
°C





Description

This 250V enhancement mode N-channel MOSFET of the ZVN4525E6 provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

SOT89 and SOT223 versions are also available.






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