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ZVN4525Z

Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• Complementary P-channel Type ZVP4525G• SOT223 packageApplication• Earth Recall and dialling switches• Electronic hook switches• High Voltage...

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SeekIC No. : 004552261 Detail

ZVN4525Z: Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• Complementary P-channel Type ZVP4525G• SOT223 packageAppli...

ZVN4525Z Data Sheet

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Part Number:
ZVN4525Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• Complementary P-channel Type ZVP4525G
• SOT223 package




Application

• Earth Recall and dialling switches
• Electronic hook switches
• High Voltage Power MOSFET Drivers
• Telecom call routers
• Solid state relays




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS
250
V
Gate Source Voltage VGS
±40
V
Continuous Drain Current (VGS=10V; TA=25°C)(a)
(VGS=10V; TA=70°C)(a)		 ID
ID
240
192
mA
mA
Pulsed Drain Current (c) IDM
1.44
A
Continuous Source Current (Body Diode) IS
1.1
A
Pulsed Source Current (Body Diode) ISM
1.44
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD
1.2
9.6
W
mW/°C
Operating and Storage Temperature Range Tj;Tstg
-55 to +150
W
mW/°C





Description

This 250V enhancement mode N-channel MOSFET of the ZVN4525Z provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

SOT223 and SOT23-6 versions are also available.






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