MOSFET P-Chnl 450V
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 450 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.045 A | ||
| Resistance Drain-Source RDS (on) : | 150000 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | E-Line | Packaging : | Bulk |
| PARAMETER |
SYMBOL |
VALUE |
UNIT |
| Drain-Source Voltage |
VDS |
-450 |
V |
| Continuous Drain Current at Tamb=25°C |
ID |
-45 |
mA |
| Pulsed Drain Current |
IDM |
-400 |
mA |
| Gate Source Voltage |
VGS |
±20 |
V |
| Power Dissipation at Tamb=25°C |
Ptot |
700 |
mW |
| Operating and Storage Temperature Range |
Tj,Tstg |
-55 to +150 |
°C |