ZX3CD2S1M832

Features:

• Extremely Low Saturation Voltage (-220mV @-1A)
• HFE characterised up to -6A
• I_C = -3.5A Continuous Collector Current
• Extremely Low V_F, fast switching Schottky
• 3mm x 2mm MLP




Application

• DC - DC Converters
• Mobile Phones
• Charging Circuits
• Motor control




Pinout






Specifications

PARAMETER	SYMBOL	LIMIT	UNIT
Collector-base voltage	VCBO	-25	V
Collector-emitter voltage	VCEO	-20	V
Emitter-base voltage	VEBO	-7.5	V
Peak Pulse Current	ICM	-6
Continuous collector current (a)(f)	IC	-3.5	A
Base Current	ICM	1000	A
Power dissipation at TA =25°C (a)(f) Linear derating factor	ID	1.5 12	W mW/°C
Power dissipation at TA =25°C (b)(f) Linear derating factor	PD	2.45 19.6	W mW/°C
Power dissipation at TA =25°C (c)(f) Linear derating factor	PD	1 8	W mW/°C
Power dissipation at TA =25°C (d)(f) Linear derating factor	PD	1.13 9	W mW/°C
Power dissipation at TA =25°C (d)(g) Linear derating factor	PD	1.7 13.6	W mW/°C
Power dissipation at TA =25°C (e)(g) Linear derating factor	PD	3 24	W mW/°C
Storage Temperature Range	Tstg	-55 to +150
Junction Temperature	Tj	150	°C

Part Number	ZX3CD2S1M832
Product Type	PNP + Schottky
VCEO(V)	-20 40
IC(A)	-3.5 1.85
ICM (A)	-6
PD (W)	1.5 1.2
hFE Min	300
@ IC (A)	-0.1
VCE (SAT) Max (mV)	-220
@ IC (A)	-220
@ IB (mA)	-20
VFMax (V)	- 0.5
@ IF(A)	- 1
RCE(sat) (m)	64
Spicemodel

Description

Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky barrier diode. This excellent combination ZX3CD2S1M832 provides users with highly efficient performance in applications including DC-DC and charging circuits. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count