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ZX3CDBS1M832

Features: • Extremely Low Saturation Voltage (150mV @1A)• HFE characterised up to 6A• IC = 4.5A Continuous Collector Current• Extremely Low VF, fast switching Schottky• 3mm x 2mm MLPApplication• DC - DC Converters• Mobile Phones• Charging Circuits...

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ZX3CDBS1M832: Features: • Extremely Low Saturation Voltage (150mV @1A)• HFE characterised up to 6A• IC = 4.5A Continuous Collector Current• Extremely Low VF, fast switching Schottky•...

ZX3CDBS1M832 Data Sheet

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Part Number:
ZX3CDBS1M832
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extremely Low Saturation Voltage (150mV @1A)
• HFE characterised up to 6A
• IC = 4.5A Continuous Collector Current
• Extremely Low VF, fast switching Schottky
• 3mm x 2mm MLP





Application

• DC - DC Converters
• Mobile Phones
• Charging Circuits
• Motor control





Pinout

Connection Diagram




Specifications

PARAMETER
SYMBOL
VALUE
UNIT
Transistor
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
7.5
V
Peak Pulse Current
ICM
12
A
Continuous Collector Current (a)(f)
IC
4.5
A
Continuous Collector Current (b)(f)
IC
5
A
Base Current
IB
1000
mA
Power Dissipation at TA=25 (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/
Power Dissipation at TA=25 (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/
Power Dissipation at TA=25 (c)(f)
Linear Derating Factor
PD
1
8
W
mW/
Power Dissipation at TA=25 (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/
Power Dissipation at TA=25 (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/
Power Dissipation at TA=25 (e)(g)
Linear Derating Factor
PD
3
24
W
mW/
Storage Temperature Range
Tstg
-55 to +150
Junction Temperature
Tj
150


Part Number ZX3CDBS1M832
Product Type NPN + Schottky
VCEO(V) 20
40
IC(A) 4.5
1.85
ICM (A) 12
PD (W) 1.5
1.2
hFE Min 300
@ IC (A) 0.2
VCE (SAT) Max (mV) 150
@ IC (A) 1
@ IB (mA) 10
VFMax (V) -
0.5
@ IF(A) -
1
RCE(sat) (m) 47
Spicemodel





Description

Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky barrier diode. This excellent combination ZX3CDBS1M832 provides users with highly efficient performance in applications including DC-DC and charging circuits.






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