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ZX5T851G

Features: • Extremely low equivalent on-resistance; RSAT = 35mV at 6A• 6 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hFE characteristics up to 10 ampsApplication• Emergency lighting circuits• Motor driving (...

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ZX5T851G: Features: • Extremely low equivalent on-resistance; RSAT = 35mV at 6A• 6 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hF...

ZX5T851G Data Sheet

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Part Number:
ZX5T851G
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extremely low equivalent on-resistance; RSAT = 35mV at 6A
• 6 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 10 amps




Application

• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC Modules
• Backlight Inverters




Pinout

Connection Diagram




Specifications

Part Number ZX5T851G
Product Type NPN
VCEO (V) 60
IC (A) 6
ICM (A) 20
PD (W) 3
hFE Min 100
20
hFE Max 300
@ IC (A) 2
10
VCE (SAT) Max (mV) 70
260
@ IC (A) 1
6
@ IB (mA) 50
300
fT Min (MHz) 130
RCE (SAT) (m) 35


PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BVCBO
150
V
Collector-emitter voltage
BVCEO
60
V
Emitter-base voltage
BVEBO
7
V
Continuous collector current (a)
IC
6
A
Peak pulse current
ICM
20
A
Power dissipation at TA =25°C (a)
Linear derating factor
PD
3.0
24
W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor
PD
1.6
12.8
W
mW/°C
Operating and storage temperature range
Tj,Tstg
-55 to 150
°C





Description

Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making ZX5T851G ideal for use in DC-DC circuits and various driving and power management functions.




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