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ZX5T951G

Features: • Extremely low equivalent on-resistance; RSAT = 39mV at 5A• 5.5 amps continuous current• Up to 15 amps peak current• Very low saturation voltages• Excellent gain characteristics specified up to 10 AmpsApplication• DC - DC Converters• MOSFET gate...

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ZX5T951G: Features: • Extremely low equivalent on-resistance; RSAT = 39mV at 5A• 5.5 amps continuous current• Up to 15 amps peak current• Very low saturation voltages• Excellent ...

ZX5T951G Data Sheet

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Part Number:
ZX5T951G
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extremely low equivalent on-resistance; RSAT = 39mV at 5A
• 5.5 amps continuous current
• Up to 15 amps peak current
• Very low saturation voltages
• Excellent gain characteristics specified up to 10 Amps




Application

• DC - DC Converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZX5T951G
Product Type PNP
VCEO (V) -60
IC (A) -5.5
ICM (A) -15
PD (W) 3
hFE Min 100
10
hFE Max 300
@ IC (A) -2
-10
VCE (SAT) Max (mV) -70
-250
@ IC (A) -1
-5
@ IB (mA) -100
-500
fT Min (MHz) 120
RCE (SAT) (m) 39


PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage BVCBO
-100
V
Collector-emitter voltage BVCEO
-60
V
Emitter-base voltage BVEBO
-7
V
Continuous collector current (a) IC
-5.5
A
Peak pulse current ICM
-15
A
Power dissipation at TA =25°C (a)
Linear derating factor		 PD
3.0
24
W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor		 PD
1.6
12.8
W
mW/°C
Operating and storage temperature range Tj, Tstg
-55 to +150
°C





Description

Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor ZX5T951G offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.




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