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ZXM62N02E6

Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23-6 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications Part Number ZXM62N02E6 Config/Polarity N PD(W) 1.7 VDSS (V) 20...

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ZXM62N02E6: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23-6 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPino...

ZXM62N02E6 Data Sheet

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Part Number:
ZXM62N02E6
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT23-6 package




Application

· DC - DC Converters
· Power Management Functions
· Disconnect switches
· Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXM62N02E6
Config/
Polarity		 N
PD
(W)		 1.7
VDSS
(V)		 20
VGSS
(+/-)
(V)		 12
ID
(A)		 3.2
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V
RDS(on) Max() @ VGS; 2.7V 0.125
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.1
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)		 0.7
Ciss (typ)
(pF)		 480
Qg (typ) (nC)
@ VGS; 4.5V		 6.3 (max)
Qg (typ) (nC)
@ VGS; 10V


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGS ± 12 V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(VGS=4.5V; TA=70°C)(b)		 ID 3.2
2.6		 A
Pulsed Drain Current (c) IDM 18 A
Continuous Source Current (Body Diode) (b) IS 2.1 A
Pulsed Source Current (Body Diode) ISM 18 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD 1.1
8.8		 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor		 PD 1.7
13.6		 W
mW/°C





Description

This new generation of high density MOSFETs ZXM62N02E6  from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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