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ZXM62N03G

Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT223 packageApplication· DC-DC Converters· Audio Output Stage· Relay and Soleniod driving· Motor ControlPinoutSpecifications Part Number ZXM62N03G Config/Polarity N PD(W) 3.9 VDSS (V) 30 ...

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ZXM62N03G: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT223 packageApplication· DC-DC Converters· Audio Output Stage· Relay and Soleniod driving· Motor ControlPinoutSp...

ZXM62N03G Data Sheet

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Part Number:
ZXM62N03G
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT223 package




Application

· DC-DC Converters
· Audio Output Stage
· Relay and Soleniod driving
· Motor Control




Pinout

Connection Diagram




Specifications

Part Number ZXM62N03G
Config/
Polarity		 N
PD
(W)		 3.9
VDSS
(V)		 30
VGSS
(+/-)
(V)		 20
ID
(A)		 4.7
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V
RDS(on) Max() @ VGS; 2.7V
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.15
RDS(on) Max() @ VGS; 10.0V 0.11
VGS(th)
(V)		 1
Ciss (typ)
(pF)		 380
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 10V		 9.6 (max)


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 30 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
 ID 4.7
3.8
3.4		 A
Pulsed Drain Current (c) IDM 16 A
Continuous Source Current (Body Diode) (b) IS 2.6 A
Pulsed source current (body diode) (c) ISM 16 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor		 PD 2.0
16		 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor		 PD 3.9
31		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of High Density MOSFETs ZXM62N03G from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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